The OM9901-11 power amplifier module (PAM) is designed and optimized for 2G quad-band cellular handsets supporting user-optional control of linear RF or analog Vramp of the GMSK envelope. The low band (LB) PA transmits in the GSM850/EGSM900 bands. The high band (HB) PA supports DCS1800/PCS1900 bands.
The compact 3.0 mm x 3.5 mm x 0.67 mm module consists of a quad-band power amplifier die, a silicon CMOS controller, 50 Ω input and output matching circuitry. The silicon CMOS controller supports fully programmable through the RF Front-End Mobile Industry Processor Interface (RFFE MIPI) with providing PA bias and product identification read-back capability.
The power amplifier blocks, the controller and the passive components are mounted by flip-chip package technology on a multi-layer laminate substrate. The entire assembly is encapsulated with plastic over mold.
► High efficiency
► Programmable bias for improved backed-off efficiency
► High linearity for 8PSK
► Low stand-by leakage
► Compatible with DC-DC converter
► Autonomous Over-voltage Protection
► Vramp GMSK Power Control Mode
► Flip-chip package
► Small, low profile package
• 3.0 mm x 3.5 mm x 0.67 mm Typical
• 12-pads configuration
► Quad-band cellular handsets
► GMSK Modulation
• Class 4 GSM850/EGSM900 Band
• Class 1 DCS1800/PCS1900 Band
• Class 12 GPRS multi-slot operation
► EDGE Modulation
• Class E2 GSM850/EGSM900
• Class E2 DCS1800/PCS1900
Functional Block Diagram
- GROUP5G Phase 5N MMMB PA
- FUNCTIONQuad-band GSM/GPRS/EDGE
- PACKAGELGA 3.0 mm x 3.5 mm x 0.67 mm
